Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 57A (Tj)
Rds On (Max) @ Id, Vgs 16 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 49nC @ 10V
Input Capacitance (Ciss) @ Vds 2404pF @ 50V
Power - Max 148W
Mounting Type -
Package / Case -