| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDS6681Z | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 30V | 20A (Ta) | 4.6 mOhm @ 20A, 10V | 3V @ 250µA | 260nC @ 10V | 7540pF @ 15V | 1W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| TJ20S04M3L(T6L1,NQ | TOSHIBA CORP | MOSFET P-Channel, Metal Oxide | 40V | 20A (Ta) | 22.2 mOhm @ 10A, 10V | 3V @ 1mA | 37nC @ 10V | 1850pF @ 10V | 41W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| AON2411 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET P-Channel, Metal Oxide | 12V | 20A (Ta) | 8 mOhm @ 12A, 4.5V | 900mV @ 250µA | 30nC @ 4.5V | 2180pF @ 6V | 5W | Surface Mount | 8-WFDFN Exposed Pad | |
| RZY200P01TL | ROHM CO LTD | MOSFET P-Channel, Metal Oxide | 12V | 20A (Ta) | - | - | - | - | 20W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| 2SJ651 | SANYO SEMICONDUCTOR CO LTD | MOSFET P-Channel, Metal Oxide | 60V | 20A (Ta) | 60 mOhm @ 10A, 10V | - | 45nC @ 10V | 2200pF @ 20V | 2W | Through Hole | TO-220-3 Full Pack | |
| CSD25310Q2 | TEXAS INSTRUMENTS INC | MOSFET P-Channel, Metal Oxide | 20V | 20A (Ta) | 23.9 mOhm @ 5A, 4.5V | 1.1V @ 250µA | 4.7nC @ 4.5V | 655pF @ 10V | 2.9W | Surface Mount | 6-WDFN Exposed Pad | |
| TPCC8104,LQ(O | TOSHIBA CORP | MOSFET P-Channel, Metal Oxide | 30V | 20A (Ta) | 8.8 mOhm @ 10A, 10V | 2V @ 500µA | 58nC @ 10V | 2260pF @ 10V | 27W | Surface Mount | 8-PowerVDFN | |
| 2SJ401(Q) | TOSHIBA CORP | MOSFET P-Channel, Metal Oxide | 60V | 20A (Ta) | 45 mOhm @ 10A, 10V | 2V @ 1mA | 90nC @ 10V | 2800pF @ 10V | 100W | Through Hole | TO-220-3, Short Tab |
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