Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 60 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 20V
Power - Max 2W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack