MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Max:150°C;
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 260nC @ 10V
Input Capacitance (Ciss) @ Vds 7540pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 1091.9
10
-
INR 878.4
100
-
INR 701.5
500
-
INR 616.1
1000
-
INR 528.87
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1091.9
Buying Option 2
1
-
INR 475.8
2500
-
INR 475.8
5000
-
INR 458.11
7500
-
INR 440.42
12500
-
INR 422.73
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 475.8
Buying Option 3
1
-
INR 1091.9
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1091.9