FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Rds On (Max) @ Id, Vgs | 23.9 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 250µA |
Gate Charge (Qg) @ Vgs | 4.7nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 655pF @ 10V |
Power - Max | 2.9W |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |