| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCH6660-TL-H | ON SEMICONDUCTOR | N and P-Channel | 20V | 2A, 1.5A | 136 mOhm @ 1A, 4.5V | - | 1.8nC @ 4.5V | 128pF @ 10V | 800mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | |
| QS8M51TR | ROHM CO LTD | N and P-Channel | 100V | 2A, 1.5A | 325 mOhm @ 2A, 10V | 2.5V @ 1mA | 4.7nC @ 5V | 290pF @ 25V | 1.5W | Surface Mount | 8-SMD, Flat Lead | |
| ECH8620-TL-E | SANYO SEMICONDUCTOR CO LTD | N and P-Channel | 100V | 2A, 1.5A | 260 mOhm @ 1A, 10V | - | 13.8nC @ 10V | 650pF @ 20V | 1.3W | Surface Mount | 8-SMD, Flat Lead | |
| SI3585DV-T1-E3 | VISHAY SILICONIX | N and P-Channel | 20V | 2A, 1.5A | 125 mOhm @ 2.4A, 4.5V | 600mV @ 250µA | 3.2nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) | |
| SI3585DV-T1-GE3 | VISHAY SILICONIX | N and P-Channel | 20V | 2A, 1.5A | 125 mOhm @ 2.4A, 4.5V | 600mV @ 250µA | 3.2nC @ 4.5V | - | 830mW | Surface Mount | 6-TSOP (0.065", 1.65mm Width) |
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