Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 2A, 1.5A
Rds On (Max) @ Id, Vgs 260 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 13.8nC @ 10V
Input Capacitance (Ciss) @ Vds 650pF @ 20V
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead