MOSFET, N & P CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600mV; Power Dissipation Pd:830mW; Transistor Case Style:TSOP; No. of Pins:6;
Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A, 1.5A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA
Gate Charge (Qg) @ Vgs 3.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 830mW
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)