Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A, 1.5A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA
Gate Charge (Qg) @ Vgs 3.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 830mW
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)