| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB02SLT12-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | - | - | |
| GB02SLT12-252 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 2A | 2V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 4µA @ 1200V | 138pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IDW10G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 300pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| SDT10S30 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SDP10S30 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-3 | |
| SDT08S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 280pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SCS106AGC | ROHM CO LTD | Silicon Carbide Schottky | 600V | 6A | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 260pF @ 1V, 1MHz | 2.3°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| BYT71-800 | STMICROELECTRONICS | Standard | 800V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 20µA @ 800V | - | 2.3°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| STTA812D | STMICROELECTRONICS | Standard | 1200V (1.2kV) | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1200V | - | 2.3°C/W Jc | 150°C (Max) | Through Hole | TO-220-2 |
© 2016 Copyright
