Specification
Diode Type Silicon Carbide Schottky
Reverse DC Voltage(Vr) 600V
Current - Average Rectified (Io) 8A (DC)
Forward Voltage (Vf) 1.7V @ 8A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Reverse Leakage Current @ Vr 300µA @ 600V
Capacitance @ Vr, F 280pF @ 0V, 1MHz
Thermal Resistance 2.3°C/W Jc
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-220-2