| Diode Type | Silicon Carbide Schottky |
| Reverse DC Voltage(Vr) | 650V |
| Current - Average Rectified (Io) | 10A (DC) |
| Forward Voltage (Vf) | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Reverse Leakage Current @ Vr | 400µA @ 650V |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Thermal Resistance | 2.3°C/W Jc |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
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