1N8032-GA |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
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650V
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2.5A
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1.3V @ 2.5A
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No Recovery Time > 500mA (Io)
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0ns
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5µA @ 650V
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274pF @ 1V, 1MHz
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3.4°C/W Jc
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-55°C ~ 250°C
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Through Hole
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TO-257-3
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RGP25B-E3/54 |
VISHAY SEMICONDUCTORS |
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Standard
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100V
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2.5A
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1.3V @ 2.5A
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Fast Recovery =< 500ns, > 200mA (Io)
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150ns
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5µA @ 100V
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60pF @ 4V, 1MHz
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20°C/W Ja
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-65°C ~ 175°C
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Through Hole
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DO-201AD, Axial
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RGP25K-E3/54 |
VISHAY SEMICONDUCTORS |
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Standard
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800V
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2.5A
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1.3V @ 2.5A
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Fast Recovery =< 500ns, > 200mA (Io)
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500ns
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5µA @ 800V
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60pF @ 4V, 1MHz
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20°C/W Ja
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-65°C ~ 175°C
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Through Hole
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DO-201AD, Axial
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RGP25BHE3/54 |
VISHAY SEMICONDUCTORS |
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Standard
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100V
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2.5A
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1.3V @ 2.5A
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Fast Recovery =< 500ns, > 200mA (Io)
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150ns
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5µA @ 100V
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60pF @ 4V, 1MHz
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20°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
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DO-201AD, Axial
|
RGP25KHE3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
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800V
|
2.5A
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1.3V @ 2.5A
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Fast Recovery =< 500ns, > 200mA (Io)
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500ns
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5µA @ 800V
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60pF @ 4V, 1MHz
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20°C/W Ja
|
-65°C ~ 175°C
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Through Hole
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DO-201AD, Axial
|
RGP25MHE3/54 |
VISHAY SEMICONDUCTORS |
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Standard
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1000V (1kV)
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2.5A
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1.3V @ 2.5A
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Fast Recovery =< 500ns, > 200mA (Io)
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500ns
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5µA @ 1000V
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60pF @ 4V, 1MHz
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20°C/W Ja
|
-65°C ~ 175°C
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Through Hole
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DO-201AD, Axial
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RGP25M-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
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1000V (1kV)
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2.5A
|
1.3V @ 2.5A
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Fast Recovery =< 500ns, > 200mA (Io)
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500ns
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5µA @ 1000V
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60pF @ 4V, 1MHz
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20°C/W Ja
|
-65°C ~ 175°C
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Through Hole
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DO-201AD, Axial
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