| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C2M1000170D | CREE INC | SiCFET N-Channel, Silicon Carbide | 1700V (1.7kV) | 4.9A (Tc) | 1.1 Ohm @ 2A, 20V | 2.4V @ 100µA | 13nC @ 20V | 191pF @ 1000V | 69W | Through Hole | TO-247-3 | |
| C2M0160120D | CREE INC | SiCFET N-Channel, Silicon Carbide | 1200V (1.2kV) | 17.7A | 196 mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6nC @ 20V | 527pF @ 800V | 125W | Through Hole | TO-247-3 | |
| C2M0080120D | CREE INC | SiCFET N-Channel, Silicon Carbide | 1200V (1.2kV) | 31.6A (Tc) | 98 mOhm @ 20A, 20V | 2.2V @ 1mA | 49.2nC @ 20V | 950pF @ 1000V | 208W | Through Hole | TO-247-3 | |
| CMF10120D | CREE INC | SiCFET N-Channel, Silicon Carbide | 1200V (1.2kV) | 24A (Tc) | 220 mOhm @ 10A, 20V | 4V @ 500µA | 47.1nC @ 20V | 928pF @ 800V | 152W | Through Hole | TO-247-3 | |
| CMF20120D | CREE INC | SiCFET N-Channel, Silicon Carbide | 1200V (1.2kV) | 42A (Tc) | 110 mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | 1915pF @ 800V | 150W | Through Hole | TO-247-3 | |
| CAS100H12AM1 | CREE INC | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 165A | 20 mOhm @ 20A, 20V | 3.1V @ 50mA | - | 9500pF @ 800V | - | Chassis Mount | Module | |
| CCS050M12CM2 | CREE INC | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 87A | 34 mOhm @ 50A, 20V | 2.3V @ 2.5mA | 180nC @ 20V | 2.810nF @ 800V | 337W | Chassis Mount | Module |
© 2016 Copyright
