Stock: 11151
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 157.53 | ₹ 15,75,300.00 |
| 1000 | ₹ 167.32 | ₹ 1,67,320.00 |
| 500 | ₹ 177.11 | ₹ 88,555.00 |
| 100 | ₹ 186.90 | ₹ 18,690.00 |
| 25 | ₹ 196.69 | ₹ 4,917.25 |
Stock: 800
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 220.28 | ₹ 22,02,800.00 |
| 1000 | ₹ 234.74 | ₹ 2,34,740.00 |
| 500 | ₹ 248.09 | ₹ 1,24,045.00 |
| 128 | ₹ 262.55 | ₹ 33,606.40 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 75A (Tc) | |
| Max On-State Resistance | 8.8 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 156nC @ 10V | |
| Input Cap at Vds | 8250pF @ 25V | |
| Maximum Power Handling | 230W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 75A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 156nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 8250pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 230W for device protection. Peak Rds(on) at Id 156nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 8.8 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
