Stock: 191
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 98.79 | ₹ 9,87,900.00 |
| 1000 | ₹ 105.02 | ₹ 1,05,020.00 |
| 500 | ₹ 111.25 | ₹ 55,625.00 |
| 100 | ₹ 117.48 | ₹ 11,748.00 |
| 25 | ₹ 123.71 | ₹ 3,092.75 |
Stock: 191
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 98.79 | ₹ 9,87,900.00 |
| 1000 | ₹ 105.02 | ₹ 1,05,020.00 |
| 500 | ₹ 111.25 | ₹ 55,625.00 |
| 100 | ₹ 117.48 | ₹ 11,748.00 |
| 25 | ₹ 123.71 | ₹ 3,092.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 150V | |
| Continuous Drain Current at 25C | 50A (Tc) | |
| Max On-State Resistance | 35 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 79nC @ 10V | |
| Input Cap at Vds | 4720pF @ 25V | |
| Maximum Power Handling | 250W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 50A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 150V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 79nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4720pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 250W for device protection. Peak Rds(on) at Id 79nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 35 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
