Stock: 200
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 134.39 | ₹ 13,43,900.00 |
| 1000 | ₹ 143.29 | ₹ 1,43,290.00 |
| 500 | ₹ 151.30 | ₹ 75,650.00 |
| 100 | ₹ 160.20 | ₹ 16,020.00 |
| 25 | ₹ 168.21 | ₹ 4,205.25 |
Stock: 200
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 148.63 | ₹ 14,86,300.00 |
| 1000 | ₹ 158.42 | ₹ 1,58,420.00 |
| 500 | ₹ 167.32 | ₹ 83,660.00 |
| 100 | ₹ 177.11 | ₹ 17,711.00 |
| 25 | ₹ 186.01 | ₹ 4,650.25 |
Stock: 200
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10000 | ₹ 185.79 | ₹ 18,57,900.00 |
| 1000 | ₹ 198.03 | ₹ 1,98,030.00 |
| 500 | ₹ 209.15 | ₹ 1,04,575.00 |
| 151 | ₹ 221.39 | ₹ 33,429.89 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 35A (Tc) | |
| Max On-State Resistance | 70 mOhm @ 17A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 77nC @ 10V | |
| Input Cap at Vds | 4570pF @ 25V | |
| Maximum Power Handling | 250W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 35A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 200V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 77nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 4570pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 250W for device protection. Peak Rds(on) at Id 77nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 70 mOhm @ 17A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
