BFU725F/N1,115

BFU725F/N1,115
Attribute
Description
Manufacturer Part Number
BFU725F/N1,115
Manufacturer
Description
TRANSISTOR NPN 40MA SOT343
Note : GST will not be applied to orders shipping outside of India

Stock:
1655

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 12.43 ₹ 12,43,000.00
10000 ₹ 14.84 ₹ 1,48,400.00
1000 ₹ 16.64 ₹ 16,640.00
500 ₹ 18.05 ₹ 9,025.00
100 ₹ 20.05 ₹ 2,005.00

Stock:
3000

Distributor: 133

Lead Time: Not specified


Quantity Unit Price Ext. Price
3000 ₹ 17.80 ₹ 53,400.00

Stock:
2611

Distributor: 11

Lead Time: Not specified


Quantity Unit Price Ext. Price
3000 ₹ 20.11 ₹ 60,330.00
1000 ₹ 20.83 ₹ 20,830.00
500 ₹ 23.05 ₹ 11,525.00
100 ₹ 29.55 ₹ 2,955.00
10 ₹ 43.16 ₹ 431.60
1 ₹ 60.52 ₹ 60.52

Stock:
5

Distributor: 130

Lead Time: Not specified


Quantity Unit Price Ext. Price
5 ₹ 50.77 ₹ 253.85
10 ₹ 36.44 ₹ 364.40
100 ₹ 25.83 ₹ 2,583.00
500 ₹ 20.93 ₹ 10,465.00
1000 ₹ 15.77 ₹ 15,770.00
5000 ₹ 15.47 ₹ 77,350.00

Stock:
29

Distributor: 108

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 79.21 ₹ 79.21
10 ₹ 48.95 ₹ 489.50
100 ₹ 32.04 ₹ 3,204.00
500 ₹ 24.74 ₹ 12,370.00
1000 ₹ 21.89 ₹ 21,890.00
3000 ₹ 18.69 ₹ 56,070.00

Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 2.8V
Transition Freq 55GHz
Noise Figure @ f 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
Amplification Factor 10dB ~ 24dB
Maximum Power Handling 136mW
DC Current Gain (hFE) @ Ic, Vce 160 @ 10mA, 2V
Maximum Collector Amps 40mA
Attachment Mounting Style Surface Mount
Component Housing Style SOT-343 Reverse Pinning

Description

Measures resistance at forward current 55GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 40mA. Features a DC current gain hFE at Ic evaluated at 160 @ 10mA, 2V. Offers 55GHz transition frequency for seamless signal modulation. Delivers 10dB ~ 24dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-343 Reverse Pinning providing mechanical and thermal shielding. Peak power 136mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 10dB ~ 24dB for transistor parameters. Highest collector-emitter breakdown voltage 2.8V.

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