Attribute
Description
Manufacturer Part Number
BFU660F,115
Manufacturer
Description
TRANSISTOR NPN SOT343F-4
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 5.5V | |
| Transition Freq | 21GHz | |
| Noise Figure @ f | 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz | |
| Amplification Factor | 12dB ~ 21dB | |
| Maximum Power Handling | 225mW | |
| DC Current Gain (hFE) @ Ic, Vce | 90 @ 10mA, 2V | |
| Maximum Collector Amps | 60mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-343F |
Description
Measures resistance at forward current 21GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 60mA. Features a DC current gain hFE at Ic evaluated at 90 @ 10mA, 2V. Offers 21GHz transition frequency for seamless signal modulation. Delivers 12dB ~ 21dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-343F providing mechanical and thermal shielding. Peak power 225mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 12dB ~ 21dB for transistor parameters. Highest collector-emitter breakdown voltage 5.5V.
