Attribute
Description
Manufacturer Part Number
BFU630F,115
Manufacturer
Description
TRANSISTOR NPN SOT343F-4
Manufacturer Lead Time
52 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 5.5V | |
| Transition Freq | 21GHz | |
| Noise Figure @ f | 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz | |
| Amplification Factor | 13dB ~ 22.5dB | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 90 @ 5mA, 2V | |
| Maximum Collector Amps | 30mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-343F |
Description
Measures resistance at forward current 21GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 30mA. Features a DC current gain hFE at Ic evaluated at 90 @ 5mA, 2V. Offers 21GHz transition frequency for seamless signal modulation. Delivers 13dB ~ 22.5dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-343F providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 13dB ~ 22.5dB for transistor parameters. Highest collector-emitter breakdown voltage 5.5V.
