MS1227
Data Sheet
Attribute
Description
Manufacturer Part Number
MS1227
Manufacturer
Description
TRANS RF BIPO 80W 4.5A M113
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 18V | |
| Transition Freq | 30MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 15dB | |
| Maximum Power Handling | 80W | |
| DC Current Gain (hFE) @ Ic, Vce | 200 @ 1A, 5V | |
| Maximum Collector Amps | 4.5A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 30MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 4.5A. Features a DC current gain hFE at Ic evaluated at 200 @ 1A, 5V. Offers 30MHz transition frequency for seamless signal modulation. Delivers 15dB gain to improve signal amplification efficiency. Peak power 80W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 15dB for transistor parameters. Highest collector-emitter breakdown voltage 18V.