MS1051

MS1051

Data Sheet

Attribute
Description
Manufacturer Part Number
MS1051
Description
TRANS RF BIPO 290W 20A M174
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 18V
Transition Freq 30MHz
Noise Figure @ f -
Amplification Factor 11dB ~ 13dB
Maximum Power Handling 290W
DC Current Gain (hFE) @ Ic, Vce 10 @ 5mA, 5V
Maximum Collector Amps 20A
Attachment Mounting Style -
Component Housing Style -

Description

Measures resistance at forward current 30MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 20A. Features a DC current gain hFE at Ic evaluated at 10 @ 5mA, 5V. Offers 30MHz transition frequency for seamless signal modulation. Delivers 11dB ~ 13dB gain to improve signal amplification efficiency. Peak power 290W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 11dB ~ 13dB for transistor parameters. Highest collector-emitter breakdown voltage 18V.

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