Attribute
Description
Manufacturer Part Number
MS1261
Manufacturer
Description
TRANS RF BIPO 34W 2.5A M122
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 18V | |
| Transition Freq | 175MHz | |
| Noise Figure @ f | - | |
| Amplification Factor | 12dB | |
| Maximum Power Handling | 34W | |
| DC Current Gain (hFE) @ Ic, Vce | 20 @ 250mA, 5V | |
| Maximum Collector Amps | 2.5A | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 175MHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 2.5A. Features a DC current gain hFE at Ic evaluated at 20 @ 250mA, 5V. Offers 175MHz transition frequency for seamless signal modulation. Delivers 12dB gain to improve signal amplification efficiency. Peak power 34W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 12dB for transistor parameters. Highest collector-emitter breakdown voltage 18V.