BFP 842ESD H6327
Data Sheet
Attribute
Description
Manufacturer Part Number
BFP 842ESD H6327
Manufacturer
Description
Other transistors
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 3.7V | |
| Transition Freq | 60GHz | |
| Noise Figure @ f | 0.65dB @ 3.5GHz | |
| Amplification Factor | 26dB | |
| Maximum Power Handling | 120mW | |
| DC Current Gain (hFE) @ Ic, Vce | 150 @ 15mA, 2.5V | |
| Maximum Collector Amps | 40mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Measures resistance at forward current 60GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 40mA. Features a DC current gain hFE at Ic evaluated at 150 @ 15mA, 2.5V. Offers 60GHz transition frequency for seamless signal modulation. Delivers 26dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-82A, SOT-343 providing mechanical and thermal shielding. Peak power 120mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 26dB for transistor parameters. Highest collector-emitter breakdown voltage 3.7V.
