BFP 640ESD H6327
Data Sheet
Attribute
Description
Manufacturer Part Number
BFP 640ESD H6327
Manufacturer
Description
TRANS RF NPN 46GHZ 4.7V SOT343
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 4.7V | |
| Transition Freq | 46GHz | |
| Noise Figure @ f | 0.6dB ~ 2dB @ 150MHz ~ 10GHz | |
| Amplification Factor | 7dB ~ 30dB | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 110 @ 30mA, 3V | |
| Maximum Collector Amps | 50mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Measures resistance at forward current 46GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 50mA. Features a DC current gain hFE at Ic evaluated at 110 @ 30mA, 3V. Offers 46GHz transition frequency for seamless signal modulation. Delivers 7dB ~ 30dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case SC-82A, SOT-343 providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 7dB ~ 30dB for transistor parameters. Highest collector-emitter breakdown voltage 4.7V.
