BFP 540FESD H6327
Data Sheet
Attribute
Description
Manufacturer Part Number
BFP 540FESD H6327
Manufacturer
Description
TRANS RF NPN 5V 80MA 4TSFP
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 5V | |
| Transition Freq | 30GHz | |
| Noise Figure @ f | 0.9dB ~ 1.4dB @ 1.8GHz | |
| Amplification Factor | 20dB | |
| Maximum Power Handling | 250mW | |
| DC Current Gain (hFE) @ Ic, Vce | 50 @ 20mA, 3.5V | |
| Maximum Collector Amps | 80mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 4-SMD, Flat Leads |
Description
Measures resistance at forward current 30GHz for LED or diode evaluation. Provides a maximum collector current (Ic) of 80mA. Features a DC current gain hFE at Ic evaluated at 50 @ 20mA, 3.5V. Offers 30GHz transition frequency for seamless signal modulation. Delivers 20dB gain to improve signal amplification efficiency. Mounting style Surface Mount for structural integrity. Enclosure/case 4-SMD, Flat Leads providing mechanical and thermal shielding. Peak power 250mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 20dB for transistor parameters. Highest collector-emitter breakdown voltage 5V.
