Attribute
Description
Manufacturer Part Number
STT818B
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
3A,
30V
Note :
GST will not be applied to orders shipping outside of India
Stock: 2248
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 76.54 | ₹ 76.54 |
| 10 | ₹ 48.06 | ₹ 480.60 |
| 100 | ₹ 31.15 | ₹ 3,115.00 |
| 500 | ₹ 24.03 | ₹ 12,015.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 3A | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 20mA, 2A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V | |
| Maximum Power Handling | 1.2W | |
| Transition Freq | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-23-6 |
Description
Provides a maximum collector current (Ic) of 3A. Features a DC current gain hFE at Ic evaluated at 500mV @ 20mA, 2A. Mounting style Surface Mount for structural integrity. Enclosure/case SOT-23-6 providing mechanical and thermal shielding. Peak power 1.2W for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 500mV @ 20mA, 2A for transistor parameters. Highest collector-emitter breakdown voltage 30V.
