CPH3249-TL-E
Data Sheet
Attribute
Description
Manufacturer Part Number
CPH3249-TL-E
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
350V
Manufacturer Lead Time
Not specified
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 100mA, 500mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V | |
| Maximum Power Handling | 900mW | |
| Transition Freq | 20MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-96 |
Description
Provides a maximum collector current (Ic) of 1A. Features a DC current gain hFE at Ic evaluated at 800mV @ 100mA, 500mA. Offers 20MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case SC-96 providing mechanical and thermal shielding. Peak power 900mW for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 800mV @ 100mA, 500mA for transistor parameters. Highest collector-emitter breakdown voltage 350V.
