30A01SS-TL-E
Data Sheet
Attribute
Description
Manufacturer Part Number
30A01SS-TL-E
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
PNP,
300mA,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | PNP | |
| Maximum Collector Amps | 300mA | |
| Max Collector-Emitter Breakdown | 30V | |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 5mA, 100mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 2V | |
| Maximum Power Handling | 200mW | |
| Transition Freq | 520MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 3-SMD, Flat Leads |
Description
Provides a maximum collector current (Ic) of 300mA. Features a DC current gain hFE at Ic evaluated at 220mV @ 5mA, 100mA. Offers 520MHz transition frequency for seamless signal modulation. Mounting style Surface Mount for structural integrity. Enclosure/case 3-SMD, Flat Leads providing mechanical and thermal shielding. Peak power 200mW for device protection. Type of transistor PNP for circuit architecture. Peak Vce(on) at Vge 220mV @ 5mA, 100mA for transistor parameters. Highest collector-emitter breakdown voltage 30V.
