BD241C

BD241C
Attribute
Description
Manufacturer Part Number
BD241C
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 3A, 100V
Note : GST will not be applied to orders shipping outside of India

Stock:
562

Distributor: 130

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 81.49 ₹ 81.49
10 ₹ 31.33 ₹ 313.30
100 ₹ 28.27 ₹ 2,827.00
500 ₹ 23.26 ₹ 11,630.00
1000 ₹ 19.61 ₹ 19,610.00
5000 ₹ 19.35 ₹ 96,750.00

Stock:
3379

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 83.66 ₹ 83.66
10 ₹ 32.04 ₹ 320.40
100 ₹ 29.37 ₹ 2,937.00
500 ₹ 24.03 ₹ 12,015.00

Product Attributes

Type Description
Category
Transistor Class NPN
Maximum Collector Amps 3A
Max Collector-Emitter Breakdown 100V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Collector Cutoff Max 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V
Maximum Power Handling 40W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current 300µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 3A. Offers a collector cutoff current rated at 300µA. Features a DC current gain hFE at Ic evaluated at 1.2V @ 600mA, 3A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 40W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1.2V @ 600mA, 3A for transistor parameters. Highest collector-emitter breakdown voltage 100V.

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