TIP137

TIP137
Attribute
Description
Manufacturer Part Number
TIP137
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note : GST will not be applied to orders shipping outside of India

Stock:
292

Distributor: 130

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 155.34 ₹ 155.34
10 ₹ 61.38 ₹ 613.80
100 ₹ 55.94 ₹ 5,594.00
500 ₹ 46.94 ₹ 23,470.00
1000 ₹ 41.00 ₹ 41,000.00
5000 ₹ 40.32 ₹ 2,01,600.00

Stock:
578

Distributor: 121

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 160.13 ₹ 160.13
10 ₹ 63.34 ₹ 633.40
100 ₹ 57.75 ₹ 5,775.00
500 ₹ 48.48 ₹ 24,240.00
1000 ₹ 42.36 ₹ 42,360.00
5000 ₹ 41.67 ₹ 2,08,350.00

Product Attributes

Type Description
Category
Transistor Class PNP - Darlington
Maximum Collector Amps 8A
Max Collector-Emitter Breakdown 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 30mA, 6A
Collector Cutoff Max 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Maximum Power Handling 2W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Measures resistance at forward current 500µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 500µA. Features a DC current gain hFE at Ic evaluated at 4V @ 30mA, 6A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor PNP - Darlington for circuit architecture. Peak Vce(on) at Vge 4V @ 30mA, 6A for transistor parameters. Highest collector-emitter breakdown voltage 100V.

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