ST13007
Data Sheet
Attribute
Description
Manufacturer Part Number
ST13007
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
8A,
400V
Note :
GST will not be applied to orders shipping outside of India
Stock: 1750
Distributor: 111
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5000 | ₹ 57.58 | ₹ 2,87,900.00 |
| 2000 | ₹ 60.37 | ₹ 1,20,740.00 |
| 1000 | ₹ 65.76 | ₹ 65,760.00 |
| 500 | ₹ 72.16 | ₹ 36,080.00 |
| 100 | ₹ 90.78 | ₹ 9,078.00 |
| 50 | ₹ 101.91 | ₹ 5,095.50 |
| 10 | ₹ 206.54 | ₹ 2,065.40 |
Stock: 827
Distributor: 142
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 204.70 | ₹ 204.70 |
| 10 | ₹ 100.57 | ₹ 1,005.70 |
| 100 | ₹ 89.89 | ₹ 8,989.00 |
| 500 | ₹ 72.09 | ₹ 36,045.00 |
Stock: 236
Distributor: 121
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 205.74 | ₹ 205.74 |
| 10 | ₹ 100.82 | ₹ 1,008.20 |
| 100 | ₹ 90.33 | ₹ 9,033.00 |
| 500 | ₹ 72.23 | ₹ 36,115.00 |
| 1000 | ₹ 69.43 | ₹ 69,430.00 |
| 5000 | ₹ 66.63 | ₹ 3,33,150.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 8A | |
| Max Collector-Emitter Breakdown | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 2A, 8A | |
| Collector Cutoff Max | 10µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V | |
| Maximum Power Handling | 80W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 10µA for LED or diode evaluation. Provides a maximum collector current (Ic) of 8A. Offers a collector cutoff current rated at 10µA. Features a DC current gain hFE at Ic evaluated at 3V @ 2A, 8A. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 80W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 3V @ 2A, 8A for transistor parameters. Highest collector-emitter breakdown voltage 400V.
