2SD1047P-E
Data Sheet
Attribute
Description
Manufacturer Part Number
2SD1047P-E
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
12A,
140V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 12A | |
| Max Collector-Emitter Breakdown | 140V | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 500mA, 5A | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V | |
| Maximum Power Handling | 120W | |
| Transition Freq | 15MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-3P-3, SC-65-3 |
Description
Provides a maximum collector current (Ic) of 12A. Features a DC current gain hFE at Ic evaluated at 2.5V @ 500mA, 5A. Offers 15MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-3P-3, SC-65-3 providing mechanical and thermal shielding. Peak power 120W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 2.5V @ 500mA, 5A for transistor parameters. Highest collector-emitter breakdown voltage 140V.
