Attribute
Description
Manufacturer Part Number
TIP47
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
250V
Note :
GST will not be applied to orders shipping outside of India
Stock: 5095
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 38.59 | ₹ 96,475.00 |
| 1250 | ₹ 39.72 | ₹ 49,650.00 |
| 500 | ₹ 40.83 | ₹ 20,415.00 |
| 250 | ₹ 43.09 | ₹ 10,772.50 |
| 50 | ₹ 44.21 | ₹ 2,210.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 1A | |
| Max Collector-Emitter Breakdown | 250V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V | |
| Maximum Power Handling | 2W | |
| Transition Freq | 10MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current 1mA for LED or diode evaluation. Provides a maximum collector current (Ic) of 1A. Offers a collector cutoff current rated at 1mA. Features a DC current gain hFE at Ic evaluated at 1V @ 200mA, 1A. Offers 10MHz transition frequency for seamless signal modulation. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 2W for device protection. Type of transistor NPN for circuit architecture. Peak Vce(on) at Vge 1V @ 200mA, 1A for transistor parameters. Highest collector-emitter breakdown voltage 250V.
