STB120N4F6

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 80A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40 V. Accommodates drive voltage specified at 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 65 nC @ 10 V gate charge at Vgs for enhanced switching efficiency. Upholds 65 nC @ 10 V gate charge at Vgs for reliable MOSFET functionality. Rated as Automotive grade for quality assurance. The highest input capacitance is 3850 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 3850 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Enclosure type TO-263 (D2PAK) ensuring device integrity. Highest power dissipation 110W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id 65 nC @ 10 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4mOhm @ 40A, 10V for MOSFET criteria. Product or component classification series DeepGATE™, STripFET™ VI. Manufacturer package type TO-263 (D2PAK) for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 4V @ 250µA for MOSFET threshold level.