Stock: 1002
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 345.32 | ₹ 345.32 |
| 10 | ₹ 258.10 | ₹ 2,581.00 |
| 100 | ₹ 211.82 | ₹ 21,182.00 |
| 500 | ₹ 178.89 | ₹ 89,445.00 |
| 1000 | ₹ 158.42 | ₹ 1,58,420.00 |
| 2500 | ₹ 152.19 | ₹ 3,80,475.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 150V | |
| Continuous Drain Current at 25C | 83A (Tc) | |
| Max On-State Resistance | 11.1 mOhm @ 83A, 10V | |
| Max Threshold Gate Voltage | 4V @ 160µA | |
| Gate Charge at Vgs | 55nC @ 10V | |
| Input Cap at Vds | 3230pF @ 75V | |
| Maximum Power Handling | 214W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 83A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 150V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 55nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 3230pF @ 75V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 214W for device protection. Peak Rds(on) at Id 55nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 11.1 mOhm @ 83A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 160µA for MOSFET threshold level.
