Stock: 3000
Distributor: 126
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 406.29 | ₹ 406.29 |
Stock: 375
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 420.97 | ₹ 420.97 |
| 10 | ₹ 278.57 | ₹ 2,785.70 |
| 100 | ₹ 222.50 | ₹ 22,250.00 |
| 500 | ₹ 187.79 | ₹ 93,895.00 |
| 1000 | ₹ 165.54 | ₹ 1,65,540.00 |
| 2500 | ₹ 159.31 | ₹ 3,98,275.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 600V | |
| Continuous Drain Current at 25C | 21A (Tc) | |
| Max On-State Resistance | 165 mOhm @ 12A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 790µA | |
| Gate Charge at Vgs | 52nC @ 10V | |
| Input Cap at Vds | 2000pF @ 100V | |
| Maximum Power Handling | 192W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 21A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 52nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2000pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 192W for device protection. Peak Rds(on) at Id 52nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 165 mOhm @ 12A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 790µA for MOSFET threshold level.
