SPP11N80C3
Data Sheet
Stock: 10652
Distributor: 145
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 245 | ₹ 110.68 | ₹ 27,116.60 |
| 185 | ₹ 123.45 | ₹ 22,838.25 |
| 140 | ₹ 127.72 | ₹ 17,880.80 |
| 105 | ₹ 131.97 | ₹ 13,856.85 |
| 70 | ₹ 136.22 | ₹ 9,535.40 |
| 30 | ₹ 166.02 | ₹ 4,980.60 |
Stock: 451
Distributor: 58
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2500 | ₹ 124.03 | ₹ 3,10,075.00 |
| 1250 | ₹ 127.89 | ₹ 1,59,862.50 |
| 500 | ₹ 131.35 | ₹ 65,675.00 |
| 250 | ₹ 138.68 | ₹ 34,670.00 |
| 50 | ₹ 141.76 | ₹ 7,088.00 |
Stock: 50
Distributor: 150
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 160.20 | ₹ 160.20 |
| 100 | ₹ 133.50 | ₹ 13,350.00 |
| 500 | ₹ 118.37 | ₹ 59,185.00 |
| 1000 | ₹ 114.81 | ₹ 1,14,810.00 |
Stock: 4018
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 323.96 | ₹ 323.96 |
| 10 | ₹ 210.93 | ₹ 2,109.30 |
| 100 | ₹ 165.54 | ₹ 16,554.00 |
| 500 | ₹ 137.95 | ₹ 68,975.00 |
| 1000 | ₹ 118.37 | ₹ 1,18,370.00 |
| 2500 | ₹ 112.14 | ₹ 2,80,350.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 800V | |
| Continuous Drain Current at 25C | 11A (Tc) | |
| Max On-State Resistance | 450 mOhm @ 7.1A, 10V | |
| Max Threshold Gate Voltage | 3.9V @ 680µA | |
| Gate Charge at Vgs | 85nC @ 10V | |
| Input Cap at Vds | 1600pF @ 100V | |
| Maximum Power Handling | 156W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 11A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 800V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 85nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1600pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 156W for device protection. Peak Rds(on) at Id 85nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 450 mOhm @ 7.1A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.9V @ 680µA for MOSFET threshold level.
