Stock: 452
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 185.12 | ₹ 185.12 |
| 10 | ₹ 118.37 | ₹ 1,183.70 |
| 100 | ₹ 81.97 | ₹ 8,197.00 |
| 500 | ₹ 69.33 | ₹ 34,665.00 |
| 1000 | ₹ 57.94 | ₹ 57,940.00 |
| 2500 | ₹ 53.49 | ₹ 1,33,725.00 |
| 5000 | ₹ 50.64 | ₹ 2,53,200.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 600V | |
| Continuous Drain Current at 25C | 4.9A | |
| Max On-State Resistance | 600 mOhm @ 2.4A, 10V | |
| Max Threshold Gate Voltage | 4.5V @ 200µA | |
| Gate Charge at Vgs | 12nC @ 10V | |
| Input Cap at Vds | 557pF @ 100V | |
| Maximum Power Handling | 28W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 4.9A at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 12nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 557pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 28W for device protection. Peak Rds(on) at Id 12nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 600 mOhm @ 2.4A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4.5V @ 200µA for MOSFET threshold level.
