Stock: 10719
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 217.16 | ₹ 217.16 |
| 10 | ₹ 138.84 | ₹ 1,388.40 |
| 100 | ₹ 94.34 | ₹ 9,434.00 |
| 500 | ₹ 78.68 | ₹ 39,340.00 |
| 1000 | ₹ 72.89 | ₹ 72,890.00 |
| 5000 | ₹ 61.85 | ₹ 3,09,250.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 150V | |
| Continuous Drain Current at 25C | 33A (Tc) | |
| Max On-State Resistance | 36 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 45µA | |
| Gate Charge at Vgs | 15nC @ 10V | |
| Input Cap at Vds | 1190pF @ 75V | |
| Maximum Power Handling | 74W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 33A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 150V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 15nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1190pF @ 75V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 74W for device protection. Peak Rds(on) at Id 15nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 36 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 45µA for MOSFET threshold level.
