Stock: 7875
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 181.56 | ₹ 181.56 |
| 10 | ₹ 109.47 | ₹ 1,094.70 |
| 100 | ₹ 80.81 | ₹ 8,081.00 |
| 500 | ₹ 64.35 | ₹ 32,175.00 |
| 1000 | ₹ 59.99 | ₹ 59,990.00 |
| 2500 | ₹ 57.05 | ₹ 1,42,625.00 |
| 5000 | ₹ 49.84 | ₹ 2,49,200.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 63A (Tc) | |
| Max On-State Resistance | 10.9 mOhm @ 46A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 45µA | |
| Gate Charge at Vgs | 35nC @ 10V | |
| Input Cap at Vds | 2500pF @ 50V | |
| Maximum Power Handling | 78W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 63A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 35nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2500pF @ 50V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 78W for device protection. Peak Rds(on) at Id 35nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 10.9 mOhm @ 46A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 45µA for MOSFET threshold level.
