Stock: 4190
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 231.40 | ₹ 231.40 |
| 10 | ₹ 149.52 | ₹ 1,495.20 |
| 100 | ₹ 106.80 | ₹ 10,680.00 |
| 500 | ₹ 89.89 | ₹ 44,945.00 |
| 1000 | ₹ 82.77 | ₹ 82,770.00 |
| 5000 | ₹ 70.31 | ₹ 3,51,550.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 80V | |
| Continuous Drain Current at 25C | 16A (Ta), 100A (Tc) | |
| Max On-State Resistance | 5.7 mOhm @ 50A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 73µA | |
| Gate Charge at Vgs | 56nC @ 10V | |
| Input Cap at Vds | 3900pF @ 40V | |
| Maximum Power Handling | 114W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 16A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 80V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 56nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 3900pF @ 40V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 114W for device protection. Peak Rds(on) at Id 56nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5.7 mOhm @ 50A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 73µA for MOSFET threshold level.
