CAS100H12AM1
Data Sheet
Attribute
Description
Manufacturer Part Number
CAS100H12AM1
Manufacturer
Description
No description available
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Half Bridge) | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 165A | |
| Max On-State Resistance | 20 mOhm @ 20A, 20V | |
| Max Threshold Gate Voltage | 3.1V @ 50mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 9500pF @ 800V | |
| Maximum Power Handling | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module |
Description
Measures resistance at forward current 2 N-Channel (Half Bridge) for LED or diode evaluation. Supports a continuous drain current (Id) of 165A at 25°C. Supports Vdss drain-to-source voltage rated at 1200V (1.2kV). Accommodates FET classification identified as 2 N-Channel (Half Bridge). The input capacitance is rated at 9500pF @ 800V at Vds for optimal performance. Mounting style Chassis Mount for structural integrity. Enclosure/case Module providing mechanical and thermal shielding. Peak Rds(on) at Id and Vgs 20 mOhm @ 20A, 20V for MOSFET criteria. Peak Vgs(th) at Id 3.1V @ 50mA for MOSFET threshold level.
