CCS050M12CM2
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 6 N-Channel (3-Phase Bridge) | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 87A | |
| Max On-State Resistance | 34 mOhm @ 50A, 20V | |
| Max Threshold Gate Voltage | 2.3V @ 2.5mA | |
| Gate Charge at Vgs | 180nC @ 20V | |
| Input Cap at Vds | 2.810nF @ 800V | |
| Maximum Power Handling | 337W | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | Module |
Description
Measures resistance at forward current 6 N-Channel (3-Phase Bridge) for LED or diode evaluation. Supports a continuous drain current (Id) of 87A at 25°C. Supports Vdss drain-to-source voltage rated at 1200V (1.2kV). Accommodates FET classification identified as 6 N-Channel (3-Phase Bridge). Upholds 180nC @ 20V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2.810nF @ 800V at Vds for optimal performance. Mounting style Chassis Mount for structural integrity. Enclosure/case Module providing mechanical and thermal shielding. Peak power 337W for device protection. Peak Rds(on) at Id 180nC @ 20V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 34 mOhm @ 50A, 20V for MOSFET criteria. Peak Vgs(th) at Id 2.3V @ 2.5mA for MOSFET threshold level.
