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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | SiCFET N-Channel, Silicon Carbide | |
| Drain-Source Breakdown Volts | 1200V (1.2kV) | |
| Continuous Drain Current at 25C | 31.6A (Tc) | |
| Max On-State Resistance | 98 mOhm @ 20A, 20V | |
| Max Threshold Gate Voltage | 2.2V @ 1mA | |
| Gate Charge at Vgs | 49.2nC @ 20V | |
| Input Cap at Vds | 950pF @ 1000V | |
| Maximum Power Handling | 208W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current SiCFET N-Channel, Silicon Carbide for LED or diode evaluation. Supports a continuous drain current (Id) of 31.6A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 1200V (1.2kV). Accommodates FET classification identified as SiCFET N-Channel, Silicon Carbide. Upholds 49.2nC @ 20V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 950pF @ 1000V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 208W for device protection. Peak Rds(on) at Id 49.2nC @ 20V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 98 mOhm @ 20A, 20V for MOSFET criteria. Peak Vgs(th) at Id 2.2V @ 1mA for MOSFET threshold level.
