165W,Power - Max
Through Hole,Mounting Type
10 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMG9N65CT DIODES INC
MOSFET N-Channel, Metal Oxide 650V 9A (Tc) 1.3 Ohm @ 4.5A, 10V 5V @ 250µA 39nC @ 10V 2310pF @ 25V 165W Through Hole TO-220-3
FDP12N50 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 500V 11.5A (Tc) 650 mOhm @ 6A, 10V 5V @ 250µA 30nC @ 10V 1315pF @ 25V 165W Through Hole TO-220-3
IXTF1N450 IXYS CORP
MOSFET N-Channel, Metal Oxide 4500V (4.5kV) 900mA (Tc) 85 Ohm @ 50mA, 10V 6.5V @ 250µA 40nC @ 10V 1730pF @ 25V 165W Through Hole -
SCT2160KEC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 1200V (1.2kV) 22A (Tc) 208 mOhm @ 7A, 18V 4V @ 2.5mA 62nC @ 18V 1200pF @ 800V 165W Through Hole TO-247-3
SCT2120AFC ROHM CO LTD
SiCFET N-Channel, Silicon Carbide 650V 29A (Tc) - - - - 165W Through Hole TO-220-3
FDAF62N28 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 280V 36A (Tc) 51 mOhm @ 18A, 10V 5V @ 250µA 100nC @ 10V 4630pF @ 25V 165W Through Hole SC-94
IPI80N06S3-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5.4 mOhm @ 63A, 10V 4V @ 110µA 240nC @ 10V 10760pF @ 25V 165W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPI80N06S3L-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 4.8 mOhm @ 69A, 10V 2.2V @ 115µA 273nC @ 10V 13060pF @ 25V 165W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
IPP80N06S3-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 5.4 mOhm @ 63A, 10V 4V @ 110µA 240nC @ 10V 10760pF @ 25V 165W Through Hole TO-220-3
IPP80N06S3L-05 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 55V 80A (Tc) 4.8 mOhm @ 69A, 10V 2.2V @ 115µA 273nC @ 10V 13060pF @ 25V 165W Through Hole TO-220-3