Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 5.4 mOhm @ 63A, 10V
Vgs(th) (Max) @ Id 4V @ 110µA
Gate Charge (Qg) @ Vgs 240nC @ 10V
Input Capacitance (Ciss) @ Vds 10760pF @ 25V
Power - Max 165W
Mounting Type Through Hole
Package / Case TO-220-3