20V,Drain to Source Voltage (Vdss)
4.7nC @ 4.5V,Gate Charge (Qg) @ Vgs
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
EMH2408-TL-H ON SEMICONDUCTOR
2 N-Channel (Dual) 20V 4A 45 mOhm @ 4A, 4.5V - 4.7nC @ 4.5V 345pF @ 10V 1.2W Surface Mount 8-SMD, Flat Lead
SSM6J213FE(TE85L,F TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 2.6A (Ta) 103 mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7nC @ 4.5V 290pF @ 10V 500mW Surface Mount SOT-563, SOT-666
SSM3J46CTB(TPL3) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 20V 2A (Ta) 103 mOhm @ 1.5A, 4.5V 1V @ 1mA 4.7nC @ 4.5V 290pF @ 10V 1W Surface Mount 3-SMD, No Lead
PMDPB28UN,115 NXP SEMICONDUCTORS
2 N-Channel (Dual) 20V 4.6A (Ta) 37 mOhm @ 4.6A, 4.5V 1V @ 250µA 4.7nC @ 4.5V 265pF @ 10V 510mW Surface Mount 6-UDFN Exposed Pad
EMH2604-TL-H ON SEMICONDUCTOR
N and P-Channel 20V 4A, 3A 45 mOhm @ 4A, 4.5V - 4.7nC @ 4.5V 345pF @ 10V 1.2W Surface Mount 8-SMD, Flat Lead
STS2DPFS20V STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 20V 2.5A (Tc) 200 mOhm @ 1A, 4.5V 600mV @ 250µA 4.7nC @ 4.5V 315pF @ 15V 2W Surface Mount 8-SOIC (0.154", 3.90mm Width)
STT3PF20V STMICROELECTRONICS
MOSFET P-Channel, Metal Oxide 20V 2.2A (Tc) 200 mOhm @ 1A, 4.5V 600mV @ 250µA 4.7nC @ 4.5V 315pF @ 15V 1.6W Surface Mount SOT-23-6
CSD25310Q2 TEXAS INSTRUMENTS INC
MOSFET P-Channel, Metal Oxide 20V 20A (Ta) 23.9 mOhm @ 5A, 4.5V 1.1V @ 250µA 4.7nC @ 4.5V 655pF @ 10V 2.9W Surface Mount 6-WDFN Exposed Pad