Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A, 3A
Rds On (Max) @ Id, Vgs 45 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 4.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 345pF @ 10V
Power - Max 1.2W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead