| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2N6849U | MICROSEMI COMMERCIAL BUSINESS UNIT | MOSFET P-Channel, Metal Oxide | 100V | 6.5A (Tc) | 300 mOhm @ 4.1A, 10V | 4V @ 250µA | 34.8nC @ 10V | - | 800mW | - | - | |
| JANTX2N6849 | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.5A (Tc) | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | - | 800mW | Through Hole | TO-205AF | |
| JANTX2N6849U | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.5A (Tc) | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | - | 800mW | Surface Mount | 18-BQFN Exposed Pad | |
| JAN2N6849 | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.5A (Tc) | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | - | 800mW | Through Hole | TO-205AF | |
| JANTXV2N6849 | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.5A (Tc) | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | - | 800mW | - | - | |
| JAN2N6849U | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.5A (Tc) | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | - | 800mW | - | - | |
| JANTXV2N6849U | MICROSEMI CORP | MOSFET P-Channel, Metal Oxide | 100V | 6.5A (Tc) | 320 mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | - | 800mW | - | - | |
| PSMN3R0-30MLC,115 | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 30V | 70A (Tmb) | 4.05 mOhm @ 25A, 4.5V | 2.15V @ 1mA | 34.8nC @ 10V | 2330pF @ 15V | 88W | Surface Mount | SOT1210, 8-LFPAK33 (5-Lead) | |
| SUD09P10-195-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 100V | 8.8A (Tc) | 195 mOhm @ 3.6A, 10V | 2.5V @ 250µA | 34.8nC @ 10V | 1055pF @ 50V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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